Small Signal MOSFETs (Rds(on) > 1Ω)
PJT7838
Active
The PJT7838 50 V N-Channel Enhancement Mode MOSFET uses advanced trench process technology with a current rating of 400 mA. Specially designed with ESD protection, making it ideal for relay drivers and speed line drives in an SOT-363 package. Additionally, the product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2011/65/EU directive for environmentally friendly performance.
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Package
SOT-363
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Voltage
50 V
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Current
400 mA
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Transistor Polarity
Dual N/N-Channel
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Features
• RDS(ON) , VGS@10 V, ID@500 mA<1.45 Ω
• RDS(ON) , VGS@4.5 V, ID@200 mA<1.95 Ω
• RDS(ON) , VGS@2.5 V, ID@100 mA<4.0 Ω
• RDS(ON), VGS@1.8 V, ID@10 mA<6.0 Ω
• Advanced trench process technology
• ESD protected 2 KV HBM
• Specially designed for Relay driver and speed line drive, etc.
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. (Halogen Free)
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 50 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 400 | mA | |
| Pulsed Drain Current | IDM | 1200 | mA | |
| Power Dissipation | TA=25oC Derate above 25oC |
PD | 350 2.8 |
mW mW/°C |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 357 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 uA | 50 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 uA | 0.5 | 0.86 | 1 | V |
Drain-Source On-State Resistance |
RDS(on) |
VGS=10 V, ID=500 mA VGS=4.5 V, ID=200 mA VGS=2.5 V, ID=100 mA VGS=1.8 V, ID=10 mA |
- - - - |
1.2 1.3 1.7 4 |
1.45 1.95 4 6 |
Ω |
| Zero Gate Voltae Drain Current | IDSS | VDS=50 V, VGS=0 V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20 V, VDS=0 V | - | - | ±10 | uA |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=25 V, ID=500 mA, VGS=4.5 V |
- - - |
0.95 0.34 0.32 |
- - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=25 V, VGS=0 V, f=1 MHz |
- - - |
36 11 6.6 |
- - - |
pF |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=25 V, ID=500 mA, VGS=10 V, RG=6 Ω |
- - - - |
2.3 20 7 20 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=500 mA, VGS=0 V | - | 0.9 | 1.5 | V |