*Remark of Product Status :
NSND (Not Suggested for New Design)
EoL (End of Life)
SiC Schottky Barrier Diodes are based on wide-band-gap Silicon Carbide material, offering several advantages over traditional silicon-based Schottky Barrier Diodes. SiC Diodes provide superior performance in terms of faster switching speeds, higher thermal conductivity, a wider temperature range, and increased reliability, making them attractive for various high-performance and high-efficiency applications.
SiC diodes have significantly faster switching speeds than silicon diodes, enabling them to operate at higher frequencies and facilitate faster and more efficient power conversion in high-frequency applications. This characteristic leads to lower switching losses and less heat generation during operation.
SiC diodes have higher thermal conductivity than silicon diodes, allowing them to dissipate heat more effectively and handle higher power levels with less need for cooling.
SiC diodes can operate over a wider temperature range than silicon diodes, making them ideal for high-temperature environments. They also have high reliability, with improved resistance to temperature and humidity, making them suitable for harsh environments such as those found in automotive, aerospace, and industrial applications.
SiC diodes in the Gen1 TO-247AD-3LD package are automotive qualified based on the AEC-Q101 standard, making them suitable for use in On Board Charger (OBC) applications in electric vehicles.