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Our History

Select year2019

  • 2019

    - IBU organization established, and R&D centers located in Hsinchu and San Jose, USA
    - Complete renovate and facelift of Gangshan construction

  • 2018

    Successfully passed the audit of full IATF16949:2016 certificate

  • 2016

    Launch SBA series Schottky (ultra low VF / anti-reverse)

  • 2015

    Launch SiC Schottky devices
    Launch Medium Voltage MOSFET devices

  • 2014

    High Voltage MOSFET in mass production
    Launch FRED devices
    Set up PANJIT Beijing

  • 2013

    Launch Super Schottky series

  • 2008

    Set up PANJIT Korea

  • 2006

    OHSAS-18001 certificated

  • 2005

    Maxdiode joint venture with PANJIT
    Samsung Eco Partner certificated and Sony & Asus Green Management System Verification
    TS16949 certificated

  • 2003

    Set up PANJIT Europe
    Suzhou Grande Electronics joint venture with PANJIT
    Add glass package product in product line

  • 2002

    Set up PANJIT Technology by acquiring a wafer Fab in USA
    Set up Taipei Sales Office

  • 2001

    Launch Small Signal product in the market
    Set up PANJIT Americas
    PANJIT launches IPO in Taiwan

  • 2000

    Joint venture wafer fab - Pynmax Technology set up

  • 2000

    ISO 14001 certificated
    PANJIT Wuxi Factory into operation

  • 1999

    PANJIT launches OCT in Taiwan

  • 1997

    QS 9000 certificated
    PANJIT Shenzhen Factory into operation

  • 1996

    ISO 9002 certificated

  • 1986

    Establish of PANJIT
    Sale discrete devices with the brand name: PANJIT