PANJIT's Latest 30V & 40V Automotive-Grade MOSFETs
PANJIT introduces new P-channel and N-channel MOSFETs designed to boost automotive electronic systems. The P-channel MOSFETs, with AEC-Q101 qualification and a high 175°C junction temperature, offer optimal choices for design engineers seeking reliability and simplified circuitry. These MOSFETs, minimizing RDS(ON) and maximizing avalanche ruggedness, are available in flexible packages (DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA, TO-263, and TO-263-7L).
PANJIT's N-channel power MOSFETs employ advanced trench technology, delivering excellent figure of merit (FOM), lower RDS(ON), and capacitance. Available in low-profile packages (DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA), these MOSFETs contribute to efficient and reliable PCB layouts.
By combining innovation with reliability, PANJIT's low voltage MOSFETs simplify power design circuitry, addressing the evolving needs of automotive design engineers. These components are a testament to PANJIT's commitment to shaping the future of automotive electronics, offering optimal solutions for high-performance automotive applications.
Key Features of 30V & 40V Automotive-Grade P-Channel MOSFET:
• P-channel enhancement mode logic level MOSFETs
• Low RDS(ON) to minimize conduction losses
• Package with low thermal resistance
• 100% unclamped inductive switching (UIS) tested
• Electrostatic sensitive device (ESD) capable
• AEC-Q101 qualified and PPAP capable
• 175°C operating junction temperature
• Available in TO-263-7L Package
Key Features of 30V & 40V Automotive-Grade N-Channel MOSFET:
• 30V & 40V N-channel advanced trench
• Low RDS(ON) to minimize conduction losses
• Low FOM to minimize driver losses
• Standard and logic level available
• AEC-Q101 qualified and PPAP capable
• 175°C operating junction temperature
Key Features of 30V & 40V Automotive-Grade P-Channel MOSFET:
Key Features of 30V & 40V Automotive-Grade N-Channel MOSFET:Key Features of 30V & 40V Automotive-Grade P-Channel MOSFET:Key Features of 30V & 40V Automotive-Grade N-Channel MOSFET:About PANJIT
PANJIT International Inc. (TWSE: 2481) has vertical integration capability and IDM design technology. Our business scope covers frontend wafer design, manufacturing, backend assembly and marketing under our own brand name. We are committed to investing in innovation R&D, enhancing automation, and optimizing manufacturing workmanship. Our product range includes IC, MOSFET, IGBT, SiC diode, FRED, bridge rectifier, rectifier diode, Schottky diode, TVS, ESD, and BJT, which are used in EVs, wind power, solar power, and UPS energy storage systems. Our products meet JEDEC standards and are manufactured in sites with relevant system certificates such as ISO 9001, IATF 16949, ISO 14000, ISO45001, IECQ QC080000, and ESD S20.20. We are committed to reducing global carbon emissions and aim to achieve carbon neutrality before 2040 and to become an advocate for the industry towards low-carbon sustainable development.
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Sample available
These new products can be purchased from PANJIT's E-commerce channels Digikey, Mouser, TTI, TTI Europe, TTI Asia.