MOSFET Overview
PJQ5560A-AU
New Product
The PJQ5560A-AU 60 V N-Channel Enhancement Mode MOSFET boasts an exceptional FOM and low RDS(ON) in a compact DFN5060-8L package. Qualified to the Automotive Electronics Council (AEC) standard Q101, it is designed with a logic level drive, making it ideal for a variety of automotive and power supply applications. Moreover, the product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
DFN5060-8L
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Voltage
60 V
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Current
190 A
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Transistor Polarity
N-Channel
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Features
• RDS(ON), VGS@10 V, ID@20 A<2.6 mΩ
• RDS(ON), VGS@4.5 V, ID@20 A<4.4 mΩ
• Excellent FOM
• Logic level drive
• AEC-Q101 qualified
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
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Applications
• Advanced driver assistance systems (ADAS)
• Body & Comfort
• Automotive infotainment/Instrument
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 190 134 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 630 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 188 94 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Thermal Resistance | Junction to Case Junction to Ambient |
RθJC RθJA |
0.8 45 |
°C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 uA | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 uA | 1.5 | 2.1 | 3 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10 V, ID=20 A VGS=4.5 V, ID=20 A |
- - |
2.1 3.4 |
2.6 4.4 |
mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=60 V, VGS=0 V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20 V, VDS=0 V | - | - | ±100 | nA |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=30 V, ID=20 A, VGS=10 V |
- - - |
82 14 19 |
107 - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=30 V, VGS=0 V, f=1 MHz |
- - - |
4728 1508 72 |
6146 1960 - |
pF |
| Gate resistance | Rg | f=1 MHz | - | 1.3 | - | Ω |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDS=30 V, ID=20 A, VGS=10 V, RG=3 Ω |
- - - - |
13 26 66 37 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=20 A, VGS=0 V | - | 0.8 | 1.3 | V |