High Speed IGBTs(20-40 KHz , 650V)
PTGH6065S1
PTGH6065S1 is engineered using field-stop trench technology, featuring a high-density trench cell design. This design assembled in TO-247-3L package ensures Low VCEsat with low conduction losses, outstanding switching capabilities, and optimal tail buffer doping to improve EMI performance. The high-speed IGBT is ideal for high-frequency applications, including UPS systems, PV inverters, EV charging stations, welding machines, and household appliances.
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Package
TO-247-3L
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IC
60A
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VCE
650V
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VCEsat
1.65V
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EOFF
0.85mJ
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Application
UPS, PV inverter, EV charger, Welding machine, Home appliance.
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Features
• Superior high speed switching IGBT
• Low saturation voltage 1.65V at TVJ 25 oC
• Co-packed with low Qrr and soft recovery diode
• Maximum junction temperature TVJ 175 oC
• Easy paralleling usage due to positive coefficient VCEsat
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
Maximum Ratings
| PARAMETER | SYMBOL | LIMIT | UNITS |
|---|---|---|---|
| Collector-Emitter Voltage | VCE | 650 | V |
| Gate-Emitter Voltage | VGE | ± 20 | V |
| DC Collector Current @ TC=25oC @ TC=100oC |
IC |
115 69 |
A |
| Pulsed Collector Current, tP limited by TVJmax | ICpulse | 180 | A |
| Power Dissipation @ TC =25oC @ TC=100oC |
Ptotal |
333 168 |
W |
| Operating Junction Temperature Range | TVJ | -40 to 175 | oC |
| Thermal Resistance Junction to Case, for IGBT | RθJC | 0.45 | oC/W |
| Thermal Resistance Junction to Case, for Diode | RθJC | 0.68 | oC/W |
| Thermal Resistance Junction to Ambient | RθJA | 40 | oC/W |
Static Characteristic
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Collector-Emitter Saturation Voltage | VCEsat | VGE=15V, IC=60A TVJ=25°C TVJ =125°C TVJ =175°C |
- - - |
1.65 1.85 2.00 |
2.25 - - |
V |
| Gate-Emitter Threshold Voltage | VGE(th) | IC=60mA, VCE = VGE | 3.0 | 4.5 | 6.0 | V |
| Collector-Emitter Cut Off Current | ICES | VGE=0V, VCE =650V | - | - | 120 | uA |
| Gate-Emitter Leakage Current | IGES | VGE=20V, VCE=0V | - | - | 200 | uA |
Switching Characteristic, Inductive Load
| PARAMETER | SYMBOL | TEST CONDITION | VALUE | UNITS |
|---|---|---|---|---|
| Turn-On Delay Time Rise Time Turn-Off Delay Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy |
Td(on) Tr Td(off) Tf Eon Eoff Ets |
TVJ=25oC, VCC=400V, IC=60A, VGE=0/15V, RG=10Ω |
20 50 121 58 1.75 0.85 2.6 |
ns ns ns ns mJ mJ mJ |
| Turn-On Delay Time Rise Time Turn-Off Delay Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy |
Td(on) Tr Td(off) Tf Eon Eoff Ets |
TVJ=175oC, VCC=400V, IC=60A, VGE=0/15V, RG=10Ω |
19 50 137 58 2.27 0.99 3.26 |
ns ns ns ns mJ mJ mJ |
Diode Characteristic
| PARAMETER | SYMBLO | TEST CONDITION | VALUE | UNITS |
|---|---|---|---|---|
| Diode Froward Voltage | VF | VGE=0V, IF=30A TVJ=25oC TVJ =125oC TVJ =175oC |
1.68 1.42 1.30 |
V |
| Reverse Recovery Time Reverse Recovery Charge |
trr Qrr |
IF=30A, VR=400 V, di/dt=1000 A/μs, TVJ=25oC | 59 522 |
ns nC |