High Speed IGBTs(20-40 KHz , 650V)
PTGH5065S1
PTGH5065S1 is engineered using field-stop trench technology, featuring a high-density trench cell design. This design assembled in TO-247-3L package ensures Low VCEsat with low conduction losses, outstanding switching capabilities, and optimal tail buffer doping to improve EMI performance. The high-speed IGBT is ideal for high-frequency applications, including UPS systems, PV inverters, EV charging stations, welding machines, and household appliances.
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Package
TO-247-3L
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IC
50A
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VCE
650V
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VCEsat
1.65V
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EOFF
0.47mJ
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Application
UPS, PV inverter, EV charger, Welding machine, Home appliance.
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Features
• Superior high speed switching IGBT
• Low saturation voltage 1.65V at TVJ 25°C
• Co-packed with low Qrr and soft recovery diode
• Maximum junction temperature TVJ 175°C
• Easy paralleling usage due to positive coefficient VCEsat
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
Maximum Ratings
| PARAMETER | SYMBOL | LIMIT | UNITS |
|---|---|---|---|
| Collector-Emitter Voltage | VCE | 650 | V |
| Gate-Emitter Voltage | VGE | ± 20 | V |
| DC Collector Current @ TC=25oC @ TC=100oC |
IC |
99 60 |
A |
| Pulsed Collector Current, tP limited by TVJmax | ICpulse | 150 | A |
| Power Dissipation @ TC =25oC @ TC=100oC |
Ptotal |
294 147 |
W |
| Operating Junction Temperature Range | TVJ | -40 to 175 | oC |
| Thermal Resistance Junction to Case, for IGBT | RθJC | 0.51 | oC/W |
| Thermal Resistance Junction to Case, for Diode | RθJC | 0.69 | oC/W |
| Thermal Resistance Junction to Ambient | RθJA | 40 | oC/W |
Static Characteristic
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Collector-Emitter Saturation Voltage | VCEsat | VGE=15V, IC=50A TVJ=25°C TVJ =125°C TVJ =175°C |
- - - |
1.65 1.85 2.00 |
2.25 - - |
V |
| Gate-Emitter Threshold Voltage | VGE(th) | IC=50mA, VCE = VGE | 3.0 | 4.5 | 6.0 | V |
| Collector-Emitter Cut Off Current | ICES | VGE=0V, VCE =650V | - | - | 100 | μA |
| Gate-Emitter Leakage Current | IGES | VGE=20V, VCE=0V | - | - | 200 | uA |
Switching Characteristic, Inductive Load
| PARAMETER | SYMBOL | TEST CONDITION | VALUE | UNITS |
|---|---|---|---|---|
| Turn-On Delay Time Rise Time Turn-Off Delay Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy |
Td(on) Tr Td(off) Tf Eon Eoff Ets |
TVJ=25oC, VCC=400V, IC=50A, VGE=0/15V, RG=10Ω |
19 36 99 38 1.35 0.47 1.81 |
ns ns ns ns mJ mJ mJ |
| Rise Time Turn-On Delay Time Rise Time Turn-Off Delay Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy |
Td(on) Tr Td(off) Tf Eon Eoff Ets |
TVJ=175oC, VCC=400V, IC=50A, VGE=0/15V, RG=10Ω |
18 36 114 40 1.7 0.55 2.25 |
ns ns ns ns mJ mJ mJ |
Diode Characteristic
| PARAMETER | SYMBLO | TEST CONDITION | VALUE | UNITS |
|---|---|---|---|---|
| Diode Froward Voltage | VF | VGE=0V, IF=25A TVJ=25oC TVJ =125oC TVJ =175oC |
1.62 1.35 1.21 |
V |
| Reverse Recovery Time Reverse Recovery Charge |
trr Qrr |
IF=25A, VR=400V, di/dt=1000 A/μs, TVJ=25oC | 60 504 |
ns nC |