Small Signal MOSFETs (Rds(on) > 1Ω)
PJT7828
Active
The PJT7828 30 V N-Channel Enhancement Mode MOSFET uses advanced trench process technology with a current rating of 300 mA. With ESD protection, make it specially designed for relay driver and speed line drive in an SOT-363 package. Additionally, the product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0 for environmentally friendly performance.
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Package
SOT-363
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Voltage
30 V
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Current
300 mA
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Transistor Polarity
N-Channel
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Features
• Advanced trench process technology
• ESD protected
• Specially designed for relay driver, speed line drive, etc.
• Lead free in compliance with EU RoHS 2011/65/EU directive.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±10 | V | |
| Continuous Drain Current | ID | 300 | mA | |
| Pulsed Drain Current | IDM | 600 | mA | |
| Power Dissipation | TA=25oC Derate above 25oC |
PD | 350 2.8 |
mW mW/°C |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 357 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 uA | 30 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 uA | 0.4 | 0.75 | 1 | V |
Drain-Source On-State Resistance |
RDS(on) |
VGS=4.5 V, ID=300 mA VGS=2.5 V, ID=200 mA VGS=1.8 V, ID=100 mA VGS=1.5 V, ID=50 mA VGS=1.2 V, ID=20 mA |
- - - - - |
0.7 0.8 0.9 1.1 1.5 |
1.2 1.6 2 3 4 |
Ω |
| Zero Gate Voltae Drain Current | IDSS | VDS=24 V, VGS=0 V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±8 V , VDS=0 V | - | - | ±10 | uA |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=10 V, ID=300 mA, VGS=4.5 V |
- - - |
0.9 0.3 0.2 |
- - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=10 V, VGS=0 V, f=1 MHz |
- - - |
45 14 0.8 |
- - - |
pF |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=10 V, ID=300 mA, VGS=10 V, RG=10 Ω |
- - - - |
8.3 5.7 35 12 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=300 mA, VGS=0 V | - | 0.9 | 1.3 | V |