Super Junction MOSFETs (600 - 650V)
PJMN080N65FR2
New Product
The PJMN080N65FR2 650 V N-Channel Super Junction MOSFET features high-speed switching to provide a low RDS(ON) of 75 mΩ with fast recovery characteristics. It has been tested for 100% avalanche and gate resistance (Rg) in a TOLLK package, making it ideal for server power, telecom power, and power supply unit (PSU) in power supply application. The product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
TOLLK
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Voltage
650 V
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Rdson
75 mΩ
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Current
46 A
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Transistor Polarity
N-Channel
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Features
• RDS(ON) Max, VGS@10 V: 75 mΩ
• Body diode with fast recovery characteristics
• High speed switching and low RDS(ON)
• 100% avalanche tested
• 100% Rg Tested
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
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Applications
• Power supply unit (PSU)
• Server power
• Telecom power
Absolute Maximum Ratings (TA = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | |
| Gate-Source Voltage | VGS | ±30 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 46 29.1 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 114 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 388 155 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C | |
| PARAMETER | SYMBOL | MAX. | UNITS | |
| Thermal Resistance | Junction-to-Case (Bottom) Junction-to-Ambient |
RθJC RθJA |
0.32 50 |
°C/W |
Electrical Characteristics (TA = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 uA | 650 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 uA | 3.3 | 4 | 4.7 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10 V, ID=17 A | - | 62.3 | 75 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=650 V, VGS=0 V | - | - | 10 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±30 V, VDS=0 V | - | - | ±100 | nA |
| Transfer characteristics | gfs | VDS=20 V, ID=34 A | - | 36.6 | - | S |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=400 V, ID=34 A,VGS=10 V |
- - - |
78.5 22.8 33.6 |
- - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=400 V, VGS=0 V, f=250 kHz |
- - - |
3507 49.7 6.1 |
- - - |
pF |
| Gate resistance | Rg | f=1 MHz | - | 5.9 | 12 | Ω |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=400 V, ID=34 A, VGS=10 V, RG=10 Ω |
- - - - |
44.4 140.6 71.3 59.2 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=17 A, VGS=0 V | - | 0.9 | 1.5 | V |