Super Junction MOSFETs (600 - 650V)
PJMN060N65FR2
New Product
The PJMN060N65FR2 650 V N-Channel Super Junction MOSFET features high-speed switching to provide a low RDS(ON) of 60 mΩ with fast recovery characteristics. It has been tested for 100% avalanche and gate resistance (Rg) in a TOLLK package, making it ideal for server power and telecom power in power supply application. The product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
TOLLK
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Voltage
650 V
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Rdson
60 mΩ
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Current
58.3 A
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Transistor Polarity
N-Channel
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Features
• RDS(ON) Max, VGS@10 V: 60 mΩ
• Body diode with fast recovery characteristics
• High speed switching and low RDS(ON)
• 100% avalanche tested
• 100% Rg Tested
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
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Applications
• Server power
• Telecom power
• Industrial power
Absolute Maximum Ratings (TA = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | |
| Gate-Source Voltage | VGS | ±30 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 58.3 36.9 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 128 | A |
| Power Dissipation | TC=25°C TC=100°C |
Pd | 500 200 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C | |
| PARAMETER | SYMBOL | MAX. | UNITS | |
| Thermal Resistance | Junction-to-Case (Bottom) Junction-to-Ambient |
RθJC RθJA |
0.25 50 |
°C/W |
Electrical Characteristics (TA = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 uA | 650 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 uA | 3.3 | 4 | 4.7 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10 V, ID=23 A | - | 47.4 | 60 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=650 V, VGS=0 V | - | - | 10 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±30 V, VDS=0 V | - | - | ±100 | nA |
| Transfer characteristics | gfs | VDS=20 V, ID=46 A | - | 50.6 | - | S |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=400 V, ID=46 A,VGS=10 V |
- - - |
100.3 29.3 41.6 |
- - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=400 V, VGS=0 V, f=250 kHz |
- - - |
4614 63.5 7 |
- - - |
pF |
| Gate resistance | Rg | f=1 MHz | - | 6 | 12 | Ω |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=400 V, ID=46 A, VGS=10 V, RG=10 Ω |
- - - - |
55.3 181.3 113 114 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=23 A, VGS=0 V | - | 0.9 | 1.5 | V |