MOSFET Overview
PJE138KTB89
The PJE138KTB89 50 V N-Channel Enhancement Mode MOSFET is specially designed for battery-operated systems and solid-state relay drivers with a current rating of 350 mA. With built-in ESD protection, it's ideally suited for NB / motherboard and server motherboard in computing applications. Packaged in a compact SC-89, the product is also a green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0 for environmentally friendly performance.
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Package
SC-89
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Voltage
50 V
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Current
350 mA
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Transistor Polarity
Single N-Channel
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Applications
• Battery operated systems
• Solid-state relay drivers
• Displays
• Memories
• NB / Motherboard
• Server motherboard
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Features
• RDS(ON), VGS@10 V, ID@500 mA<1.6 Ω
• RDS(ON), VGS@4.5 V, ID@200 mA<2.5 Ω
• RDS(ON), VGS@2.5 V, ID@100 mA<4.5 Ω
• ESD Protected
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 50 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 350 | mA | |
| Pulsed Drain Current | IDM | 1200 | mA | |
| Power Dissipation | Ta=25oC Derate above 25oC |
PD | 223 1.8 |
mW mW/°C |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 560 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 uA | 50 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 uA | 0.8 | 1 | 1.5 | V |
Drain-Source On-State Resistance |
RDS(on) |
VGS=10 V, ID=500 mA VGS=4.5 V, ID=200 mA VGS=2.5 V, ID=100 mA |
- - - |
0.96 1.25 2.73 |
1.6 2.5 4.5 |
Ω |
| Zero Gate Voltae Drain Current | IDSS | VDS=50 V, VGS=0 V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=± 20, VDS=0 V | - | - | ±10 | uA |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=25 V, ID=250 mA, VGS=4.5 V |
- - - |
0.63 0.2 0.23 |
1 - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=25 V, VGS=0 V, f=1 MHz |
- - - |
25 9.5 2.1 |
50 20 5 |
pF |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=25 V, ID=500 mA, VGS=10 V, RG=6 Ω |
- - - - |
2.2 19.2 6.2 23 |
5 38 12 50 |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=500 mA, VGS=0 V | - | 0.86 | 1.5 | V |