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Low VCE(sat) Transistor

BCX56-16-AU

The BCX56-16-AU NPN Low Vce(sat) Transistor is designed for power management, high-side switches, and amplifiers, offering excellent DC current gain characteristics and high collector current capability in SOT-89 package. This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101. Additionally, the product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0 for environmentally friendly performance.

  • Package

    SOT-89

  • Voltage

    100 V

  • Current

    1 A

  • Features

    • Silicon NPN epitaxial type
    • Low Vce(sat) 0.35 V(max) @Ic/Ib=500 mA/50 mA
    • High collector current capability
    • Excellent DC current gain characteristics
    • AEC-Q101 qualified
    • Lead free in compliance with EU RoHS 2.0
    • Green molding compound as per IEC 61249 Standard
    • PNP complement: BCX53-16-AU

Maximum Ratings and Thermal Characteristics (TA=25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNITS
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 6 V
Collector Current (DC) IC 1 A
Collector Current (Pulse) ICP 3 A
Power Dissipation PD 1.4 W
Junction Temperature TJ 150 °C
Thermal Resistance from Junction to Ambient RθJA 89 °C/W
Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C
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