PANJIT Semiconductor Introduces New 650V and 1200V SiC Schottky Barrier Diodes for Power Conversion Systems

New SiC Schottky Barrier Diodes would enable superior performance with zero reverse recovery current which ensure cooler system temperature under harsh operating conditions

PANJIT Semiconductor launches latest family of 650V and 1200V SiC Schottky Barrier Diodes, which provide superior switching performance and higher reliability over silicon-based devices. PANJIT Semiconductor's newly released product family of 650V and 1200V SiC diodes are packaged into through hole type TO-220AC package while the current ratings are ranged from 4 Amperes(A) to 20 Amperes (A).

PANJIT’s SiC Schottky Barrier Diodes provide zero reverse recovery current, low forward voltage drop, temperature independent switching behavior, high surge current capability, and excellent thermal performance. In addition, silicon carbide technology can provide lower conduction losses and deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.

The new SiC Schottky Barrier Diodes are aimed for engineers designing power conversion circuits for various applications including PV inverters, EV charging pile, industrial motor, telecom and server power supplies, and home appliance where they are facing challenges to deliver smaller footprints at higher system efficiencies. PANJIT Semiconductor offers 650V and 1200V SiC Diode as the ideal solution for next-generation power system designs.

Features:

• Low conduction loss
• Zero reverse recovery
• Temperature independent switching
• High surge current capability
• High ruggedness
• High junction temperature 175°C

Target Application:

Performance:

Temperature coefficient

System Evaluation:
800W CCM Boost PFC,Vin = 110Vac/60Hz, Vout = 400V, Fsw = 65kHz

SiC SBD Line-up:

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