MOSFET总览
PJD50N10SA-AU
Active
PANJIT’s PJD50N10SA-AU 100V Medium-Voltage MOSFET masterfully combines SGT and N-channel technology within the slim TO-252AA package. This MOSFET stands out for its efficiency and compact size, making it perfectly suited for the demanding conditions of automotive applications. It's designed to support diverse lighting applications, significantly broadening the adaptability and creativity of automotive LED lighting systems, as well as enhancing the performance of wireless charging transmitters. Embrace the future of automotive technology with a component that brings unparalleled flexibility and innovation.
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Package
TO-252AA
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Voltage
100V
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Current
40A
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Transistor Polarity
N-Channel
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Application
LED Lighting (Head lamp,Front lamp,Rear lamp,Matrix LEDs,Interior lighting), PD Charger / Power Adapter
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Features
• Excellent FOM
• Logic Level Drive
• AEC-Q101 Qualified
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS |
|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current @TC=25°C | ID | 40 | A |
| Continuous Drain Current @TC=100°C | ID | 28 | A |
| Pulsed Drain Current @TC=25°C | IDM | 145 | A |
| Power Dissipaton @TC=25°C | PD | 58 | W |
| Power Dissipaton @TC=100°C | PD | 29 | W |
| Continuous Drain Current @TA=25°C | ID | 9 | A |
| Continuous Drain Current @TA=70°C | ID | 7.6 | A |
| Power Dissipation @TA=25°C | PD | 3 | W |
| Power Dissipation @TA=70°C | PD | 2.1 | W |
| Single Pulse Avalanche Current | IAS | 17 | A |
| Single Pulse Avalanche Energy | EAS | 32 | mJ |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C |
| Thermal Resistance @ Junction to Case | RθJC | 2.6 | °C/W |
| Thermal Resistance @ Junction to Ambient | RθJA | 50 | °C/W |
Electrical Characteristics (TA = 25°C otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BDSS | VGS = 0V, ID = 250μA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250μA | 1.5 | 2 | 3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 14.1 | 18 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 10A | - | 20.4 | 26 | mΩ |
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = ±20V, VDS = 0V | - | - | ±100 | nA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS = 50V, ID = 20A, VGS = 10V | - | 23 | - | nC |
| Gate-Source Charge | Qgs | VDS = 50V, ID = 20A, VGS = 10V | - | 5.1 | - | nC |
| Gate-Drain Charge | Qgd | VDS = 50V, ID = 20A, VGS = 10V | - | 6.1 | - | nC |
| Input Capacitance | Ciss | VDS = 50V, VGS = 0V, f = 1MHz | - | 1009 | - | pF |
| Output Capacitance | Coss | VDS = 50V, VGS = 0V, f = 1MHz | - | 173 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = 50V, VGS = 0V, f = 1MHz | - | 23 | - | pF |
| Gate Resistance | Rg | f = 1MHz | - | 1 | - | Ω |
| Turn-On Delay Time | td(on) | VDS = 50V, ID = 20A, VGS = 10V, RG = 3Ω | - | 7.1 | - | ns |
| Turn-On Rise Time | tr | VDS = 50V, ID = 10A, VGS = 10V, RG = 3Ω | - | 14 | - | ns |
| Turn-Off Delay Time | td(off) | VDS = 50V, ID = 10A, VGS = 10V, RG = 3Ω | - | 20 | - | ns |
| Turn-Off Fall Time | tf | VDS = 50V, ID = 10A, VGS = 10V, RG = 3Ω | - | 16 | - | ns |
| Drain-Source Diode | ||||||
| Diode Forward Current | IS | TC = 25°C | - | - | 40 | A |
| Pulsed Diode Forward Current | ISM | TC = 25°C | - | - | 145 | A |
| Diode Forward Voltage | VSD | IS = 20A, VGS = 0V | - | 0.85 | 1.3 | V |
| Reverse Recovery T | Trr | VGS = 0V, IS = 20A, dlS/dt = 100A/μs |
- | 38 | - | ns |
| Reverse Recovery Time | Qrr | VGS = 0V, IS = 20A, dlS/dt = 100A/μs |
- | 28 | - | nC |