车用MOSFET总览
PSMWF011N04NS3-AU
New Product
PSMWF011N04NS3-AU is PANJIT’s Gen. 3 automotive-grade SGT MOSFET, designed for efficient and reliable switching in demanding automotive applications. Its low figure of merit (FOM) enables higher switching frequencies and improved system efficiency, while the DFN5060SW-8L package features side-wettable flanks to support Automated Optical Inspection (AOI). Built to AU+ Grade standards with fully auditable processes, the device undergoes 100% CP screening with GDBC and DPAT to support zero-defect quality. It also delivers robust SOA, avalanche capability, breakdown voltage, and gate resistance performance for enhanced system reliability.
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Package
DFN5060SW-8L
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Voltage
40 V
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Current
288 A
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Transistor Polarity
Single N-Channel
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Applications
-
Features
● Maximum RDS(ON) < 1.24 mΩ at VGS = 10 V
● Maximum RDS(ON) < 1.48 mΩ at VGS = 7 V
● N channel MOSFET - Standard Level
● Excellent FoM (RDS(on) x Qg)
● 175 °C operating temperature
● 100% Avalanche and Rg tested
● AEC-Q101 qualified and PPAP capable
● Featuring patented DFN5060SW-8L packaging technology
● Package with Side Wettable Flanks (SWF)
for automated optical solder inspection (AOI)
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TJ = 25°C unless otherwise specified)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25 °C TC=75 °C TC=100 °C |
ID | 288 235 203 |
A |
| Pulsed Drain Current | TC=25 °C, tP≤100 μs | IDM | 1282 | A |
| Power Dissipation | TC=25 °C TC=75 °C TC=100 °C |
PD | 195 130 97 |
W |
| Continuous Drain Current | TA=25 °C TA=75 °C TA=100 °C |
ID | 46.1 37.6 32.6 |
A |
| Power Dissipation | TA=25 °C TA=75 °C TA=100 °C |
PD | 5 3.3 2.5 |
W |
| Body Diode Continuous Current | TC=25 °C | IS | 191 | A |
| Body Diode Pulse Current | TC=25 °C, tP≤100 μs | ISM | 1282 | A |
| Single Pulse Avalanche Current | IAS | 56 | A | |
| Single Pulse Avalanche Energy | IAS=28 A, limited by TJ_MAX | EAS | 624 | mJ |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C |
Thermal Characteristics
| PARAMETER | SYMBOL | MIN. | TYP. | MAX. | UNIT |
|---|---|---|---|---|---|
| Thermal Resistance Junction to Ambient |
RθJA | - | 30 | - | °C/W |
| Thermal Resistance Junction to Case |
RθJC | - | 0.59 | 0.77 | °C/W |
| Thermal Resistance Junction to Case(TOP) |
RθJC_top | - | - | 17 | °C/W |
Electrical Characteristics (TJ = 25°C unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=1 mA | 40 | - | - | V |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250 μA | 2.2 | 2.7 | 3.2 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10 V, ID=30 A VGS=7 V, ID=15 A |
- - |
0.95 1.14 |
1.24 1.48 |
mΩ |
| Zero Gate Voltage Drain Current | IDSS | VDS=40 V, VGS=0 V VDS=40 V, VGS=0 V, TJ=125 °C |
- - |
- - |
1 100 |
μA |
| Gate-Source Leakage Current | IGSS | VGS=±20 V, VDS=0 V | - | - | ±100 | nA |
| Gate Resistance | Rg | f=1 MHz | - | 1 | - | Ω |
| Transfer Characteristics | gfs | VDS=5 V, ID=30 A | - | 150 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=20 V, VGS=0 V, f=1 MHz |
- - - |
4490 1360 100 |
5837 1768 150 |
pF |
| Output Charge | Qoss | VDD=20 V, VGS=0 V | - | 49 | - | nC |
| Total Gate Charge Gate-Source Charge Gate-Drain Charge Threshold Gate Charge Switching Charge |
Qg Qgs Qgd Qg(th) Qsw |
VDD=20 V, ID=30 A, VGS=0~10 V |
- - - - - |
69 18 13 12 19 |
90 23 20 - - |
nC |
| Gate Plateau Voltage | Vplateau | VDD=20 V, ID=30 A, VGS=0~10 V |
- | 4.1 | - | V |
| Total Gate Charge, sync. FET | Qg(sync) | VDD=0.1 V, ID=30 A, VGS=0~10 V |
- | 56 | - | nC |
| Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time |
td(on) tr td(off) tf |
VDD=20 V, VGS=10 V, ID=30 A, RG=3 Ω |
- - - - |
17 8 42 11 |
- - - - |
ns |
| Body Diode | ||||||
| Diode Forward Voltage | VSD | IS=30 A, VGS=0 V | - | 0.8 | 0.96 | V |
| Reverse Recovery Charge | Qrr | IS=30 A, di/dt=100 A/μs | - | 30 | - | nC |
| Reverse Recovery Time | Trr | IS=30 A, di/dt=100 A/μs | - | 36 | - | ns |