车用MOSFET总览
PSMWF005N04NS3-AU
New Product
PSMWF005N04NS3-AU is PANJIT’s Gen. 3 automotive-grade SGT MOSFET, designed for efficient and reliable switching in demanding automotive applications. Its low figure of merit (FOM) enables higher switching frequencies and improved system efficiency, while the DFN5060SW-8L package features side-wettable flanks to support Automated Optical Inspection (AOI). Built to AU+ Grade standards with fully auditable processes, the device undergoes 100% CP screening with GDBC and DPAT to support zero-defect quality. It also delivers robust SOA, avalanche capability, breakdown voltage, and gate resistance performance for enhanced system reliability.
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Package
DFN5060SW-8L
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Voltage
40 V
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Current
542 A
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Transistor Polarity
Single N-Channel
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Applications
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Features
● Maximum RDS(ON) < 0.61 mΩ at VGS = 10 V
● Maximum RDS(ON) < 0.76 mΩ at VGS = 7 V
● N channel MOSFET - Standard Level
● Excellent FoM (RDS(on) x Qg)
● 175 ℃ operating temperature
● 100% Avalanche & Rg tested
● AEC-Q101 qualified and PPAP-capable
● Featuring patented DFN5060SW-8L packaging technology
● Package with Side Wettable Flanks (SWF)
for automated optical solder inspection (AOI)
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TJ = 25°C unless otherwise specified)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25 °C TC=75 °C TC=100 °C |
ID | 542 443 383 |
A |
| Pulsed Drain Current | TC=25 °C, tP≤100 us | IDM | 2863 | A |
| Power Dissipation | TC=25 °C TC=75 °C TC=100 °C |
PD | 341 227 170 |
W |
| Continuous Drain Current | TA=25 °C TA=75 °C TA=100 °C |
ID | 65.7 53.6 46.4 |
A |
| Power Dissipation | TA=25 °C TA=75 °C TA=100 °C |
PD | 5 3.3 2.5 |
W |
| Body Diode Continuous Current | TC=25 °C | IS | 324 | A |
| Body Diode Pulse Current | TC=25 °C, tP≤100 us | ISM | 2863 | A |
| Single Pulse Avalanche Current | IAS | 80 | A | |
| Single Pulse Avalanche Energy | IAS=40 A, limited by TJ_MAX | EAS | 2377 | mJ |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C |
Thermal Characteristics
| PARAMETER | SYMBOL | MIN. | TYP. | MAX. | UNIT |
|---|---|---|---|---|---|
| Thermal Resistance Junction to Ambient |
RθJA | - | 30 | - | °C/W |
| Thermal Resistance Junction to Case |
RθJC | - | 0.34 | 0.44 | °C/W |
| Thermal Resistance Junction to Case(TOP) |
RθJC_top | - | - | 13 | °C/W |
Electrical Characteristics (TJ = 25°C unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNIT |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=1 mA | 40 | - | - | V |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250 μA | 2.2 | 2.7 | 3.2 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10 V, ID=50 A VGS=7 V, ID=25 A |
- - |
0.47 0.58 |
0.61 0.76 |
mΩ |
| Zero Gate Voltage Drain Current | IDSS | VDS=40 V, VGS=0 V VDS=40 V, VGS=0 V, TJ=125 °C |
- - |
- - |
1 100 |
μA |
| Gate-Source Leakage Current | IGSS | VGS=±20 V, VDS=0 V | - | - | ±100 | nA |
| Gate Resistance | Rg | f=1 MHz | - | 1.9 | - | Ω |
| Transfer Characteristics | gfs | VDS=5 V, ID=50 A | - | 200 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=20 V, VGS=0 V, f=1 MHz | - - - |
9850 2750 190 |
12805 3575 285 |
pF |
| Output Charge | Qoss | VDD=20 V, VGS=0 V | - | 100 | - | nC |
| Total Gate Charge Gate-Source Charge Gate-Drain Charge Threshold Gate Charge Switching Charge |
Qg Qgs Qgd Qg(th) Qsw |
VDD=20 V, ID=50 A, VGS=0~10 V | - - - - - |
140 40 21 26 35 |
182 52 32 - - |
nC |
| Gate Plateau Voltage | Vplateau | VDD=20 V, ID=50 A, VGS=0~10 V | - | 4.1 | - | V |
| Total Gate Charge, sync. FET | Qg(sync) | VDD=0.1 V, ID=50 A, VGS=0~10 V | - | 119 | - | nC |
| Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time |
td(on) tr td(off) tf |
VDD=20 V, VGS=10 V, ID=50 A, RG=3 Ω | - - - - |
20 15 90 40 |
- - - - |
ns |
| Body Diode | ||||||
| Diode Forward Voltage | VSD | IS=50 A, VGS=0 V | - | 0.8 | 0.96 | V |
| Reverse Recovery Charge | Qrr | IS=50 A, di/dt=100 A/μs | - | 55 | - | nC |
| Reverse Recovery Time | Trr | IS=50 A, di/dt=100 A/μs | - | 45 | - | ns |