车用MOSFET总览

PJQ45816AP-AU

New Product

The PJQ45816AP-AU features N-Channel enhancement mode MOSFET architecture that delivers low conduction loss, fast switching performance, and high reliability. With a strong figure-of-merit and support for logic-level drive, it is well-suited for demanding power switching applications. It is AEC-Q101 qualified for automotive-grade robustness, and packaged in a compact DFN footprint to achieve excellent thermal efficiency. It is RoHS 2.0 compliant and manufactured using green molding compounds, supporting environmentally responsible designs.

Package

DFN3333-8L
Voltage

80 V
Current

33 A
Transistor Polarity

Single N-Channel

Applications

● Motor Pump

Features

● R_DS(ON), V_GS@10 V, I_D@8 A<22.3 mΩ
● R_DS(ON), V_GS@4.5 V, I_D@4 A<30 mΩ
● Excellent FOM
● Logic level drive
● AEC-Q101 qualified
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard

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Maximum Ratings and Thermal Characteristics (T_A = 25°C unless otherwise noted)

PARAMETER		SYMBOL	LIMIT	UNITS
Drain-Source Voltage		V_DS	80	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current	T_C=25^oC T_C=100^oC	I_D	33 23	A
Pulsed Drain Current	T_C=25^oC	I_DM	80	A
Power Dissipation	T_C=25^oC T_C=100^oC	P_D	50 25	W
Operating Junction and Storage Temperature Range		T_J, T_STG	-55~175	°C
Thermal Resistance	Junction to Case Junction to Ambient	R_θJC R_θJA	3 60	°C/W

Electrical Characteristics (T_A = 25°C unless otherwise noted)

PARAMETER	SYMBOL	TEST CONDITION	MIN.	TYP.	MAX.	UNITS
Static
Drain-Source Breakdown Voltage	BV_DSS	V_GS=0 V, I_D=250 uA	80	-	-	V
Gate Threshold Voltage	V_GS(th)	V_DS=V_GS, I_D=250 uA	1.1	-	2.3	V
Drain-Source On-State Resistance	R_DS(on)	V_GS=10 V, I_D=8 A V_GS=4.5 V, I_D=4 A	- -	17.8 23.6	22.3 30	mΩ
Zero Gate Voltae Drain Current	I_DSS	V_DS=80 V, V_GS=0 V	-	-	1	uA
Gate-Source Leakage Current	I_GSS	V_GS=±20 V, V_DS=0 V	-	-	±100	nA
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge	Q_g Q_gs Q_gd	V_DS=40 V,I_D=10 A,V_GS=10 V	- - -	8.8 2.2 1.2	12 - -	nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance	Ciss Coss Crss	V_DS=40 V,V_GS=0 V,f=1 MHz	- - -	475 200 6	713 300 11	pF
Gate resistance	Rg	f=1 MHz	-	1.3	2.6	Ω
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time	td_(on) tr td_(off) tf	V_DS=40 V,I_D=10 A,V_GS=10 V,R_G=3 Ω	- - - -	10 3 11 4	- - - -	ns
Drain-Source Diode
Diode Forward Voltage	V_SD	I_S=10 A,V_GS=0 V	-	0.9	1.2	V

PJQ45816AP-AU

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

Electrical Characteristics (TA = 25°C unless otherwise noted)

Maximum Ratings and Thermal Characteristics (T_A = 25°C unless otherwise noted)

Electrical Characteristics (T_A = 25°C unless otherwise noted)