桥式整流器 (VRRM = 50 - 1000V)
KBJ410
Active
KBJ410 is an AC&DC bridge rectifier with high voltage 1000V, general purpose use in glass passivated bridge rectifier covers in computing power, game console power, high efficiency power, and home appliances power board, designed with a low forward voltage (VF) drop in a KBJ-2 package.The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
KBJ-2
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Voltage
1000V
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Current
4A
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IFSM
135A
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IR
5uA
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Application
• Computing Power / Desktop Power
• Game Console Power
• Server Power
• Air Conditioner out door power board
• High Power/High Efficiency Power
• Home Appliances Power Board
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Features
• Glass passivated chip junction
• UL recognition file number E526209
• Lead free in compliance with EU RoHS 2.0
• Halogen-free according to IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 1000 | V | |
| Maximum RMS Voltage | VRMS | 700 | V | |
| Maximum DC Blocking Voltage | VDC | 1000 | V | |
| Maximum Average Forward Current | With Heatsink | IF(AV) | 4 | V |
| Peak Forward Surge Current : 8.3 ms Single Half Sine-Wave Superimposed On Rated Load | @TA = 25°C @TA = 125°C |
IFSM | 135 108 |
A |
| Peak Forward Surge Current : 1.0 ms Single Half Square -Wave Superimposed On Rated Load | @TA = 25°C @TA = 125°C |
IFSM | 250 200 |
A |
| I2 t rating for fusing ( t = 8.3ms) | I2 t | 75.6 | A2S | |
| Typical Junction Capacitance Measured at 1 MHZ and Applied VR = 4 V | CJ | 45 | pF | |
| Typical Thermal Resistance | RθJA RθJL RθJC |
10 4 3 |
°C/W | |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Forward Voltage | VF | IF = 2A, TJ = 25°C | - | - | 1.05 | V |
| Reverse Current | IR | VR = 1000V, TJ = 25°C VR = 1000V, TJ = 125°C |
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- - |
5 100 |
μA |