High Speed IGBTs(20-40 KHz , 650V)
PTGH7565S1
PTGH7565S1 is engineered using field-stop trench technology, featuring a high-density trench cell design. This design assembled in TO-247-3L package ensures Low VCESAT with low conduction losses, outstanding switching capabilities, and optimal tail buffer doping to improve EMI performance. The high-speed IGBT is ideal for high-frequency applications, including UPS systems, PV inverters, EV charging stations, welding machines, and household appliances.
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Package
TO-247-3L
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IC
75A
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VCE
650V
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VCESAT
1.65V
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EOFF
1.27mJ
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Application
UPS, PV inverter, EV charger, Welding machine, Home appliance.
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Features
• Low saturation voltage 1.65V at TVJ 25 oC
• Co-packed with low Qrr and soft recovery diode
• Maximum junction temperature TVJ 175 oC
• Easy paralleling usage due to positive coefficient VCEsat
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
Maximum Ratings
| PARAMETER | SYMBOL | LIMIT | UNITS |
|---|---|---|---|
| Collector-Emitter Voltage | VCE | 650 | V |
| Gate-Emitter Voltage | VGE | ± 20 | V |
| DC Collector Current @ TC = 25 oC @ TC = 100 oC |
IC |
133 80 |
A |
| Pulsed Collector Current, tP limited by TVJmax | ICpulse | 225 | A |
| Power Dissipation @ TC = 25 oC @ TC = 100 oC |
Ptotal |
366 183 |
W |
| Operating Junction Temperature Range | TVJ | -40 to 175 | oC |
| Thermal Resistance Junction toCase, for IGBT | RθJC | 0.41 | oC/W |
| Thermal Resistance Junction toCase, for Diode | RθJC | 0.60 | oC/W |
| Thermal Resistance Junction to Ambient | RθJA | 40 | oC/W |
Static Characteristic
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Collector-Emitter Saturation Voltage | VCEsat | VGE = 15V, IC = 75A TVJ = 25 oC TVJ = 125 oC TVJ = 175 oC |
1.65 1.85 2.00 |
2.25 |
V |
|
| Gate-Emitter Threshold Voltage | VGE(th) | IC = 75mA, VCE = VGE | 3.0 | 4.5 | 6.0 | V |
| Collector-Emitter Cut Off Current | ICES | VGE = 0V, VCE = 650V | 150 | uA | ||
| Gate-Emitter Leakage Current | IGES | VGE = 20V, VCE = 0V | 200 | uA |
Switching Characteristic, Inductive Load
| PARAMETER | SYMBOL | TEST CONDITION | VALUE | UNITS |
|---|---|---|---|---|
| Turn-On Delay Time | Td(on) | TVJ=25oC, VCC= 400V, IC=75A, VGE = 0/15V, RG=10Ω TVJ=175oC, VCC=400V, IC=75A, VGE=0/15V, RG=10Ω |
30 29 |
ns |
| Rise Time | Tr | 73 75 |
ns | |
| Turn-Off Delay Time | Td(off) | 137 151 |
ns | |
| Fall Time | Tf | 68 71 |
ns | |
| Turn-On Energy | Eon | 2.47 3.15 |
mJ | |
| Turn-Off Energy | Eoff | 1.27 1.41 |
mJ | |
| Total Switching Energy | Ets | 3.74 4.56 |
mJ |
Diode Characteristic
| PARAMETER | SYMBLO | TEST CONDITION | VALUE | UNITS |
|---|---|---|---|---|
| Diode Froward Voltage | VF | VGE = 0V, IF = 37.5A TVJ = 25 oC TVJ = 125 oC TVJ = 175 oC |
1.74 1.44 1.29 |
V |
| Reverse Recovery Time Reverse Recovery Charge |
Trr Qrr |
IF = 37.5 A, VR = 400 V, di/dt = 1000 A/μs, TVJ = 25 oC | 57 568 |
nS nC |