中压MOSFET (60 - 200V , Rds(on) < 1Ω)
PSMQE096N10LS2
The PSMQE096N10LS2 100 V N-Channel Enhancement Mode MOSFET features high-speed switching and low reverse transfer capacitance with a current rating of 50.1 A. It has been tested for 100% UIS and gate resistance (Rg) in a DFN3333S-8L package, making it ideal for DC/DC brick and server power in power supply applications. Additionally, the product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
DFN3333S-8L
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Voltage
100 V
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Current
50.1 A
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Transistor Polarity
N-Channel
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Applications
• DC/DC brick
• Server Power
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Features
• RDS(ON) < 9.6 mΩ at VGS=10 V, ID=32 A
• RDS(ON) < 13.5 mΩ at VGS=4.5 V, ID=16 A
• High switching speed
• Low reverse transfer capacitance
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
• 100% UIS / Rg test in mass production
Absolute Maximum Ratings and Thermal Characteristics (TA=25°C unless otherwise specified)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 50.1 35.5 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 200 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 53.6 26.8 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Typical Thermal Resistance - Junction to Ambient |
RθJA | 56 | °C/W |
Electrical Characteristics (TA=25°C unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 μA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th> | VDS=VGS, ID=105 μA | 1.2 | 1,7 | 2.2 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10 V, ID=32 A VGS=4.5 V, ID=16 A |
- - |
8.6 10.8 |
9.6 13.5 |
mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=100 V, VGS=0 V | - | - | 1 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20 V, VDS=0 V | - | - | ±100 | uA |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Plateau Voltage |
Qg Qgs Qgd Vplateau |
VDS=50 V, ID=32 A, VGS=10 V |
- - - - |
24.8 5.2 3.1 3.1 |
32.2 - - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=50 V, VGS=0 V, f=250 kHZ |
- - - |
1600 447 9.3 |
2080 581 - |
pF |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time |
td(on) tr td(off) tf |
VDD=50 V, ID=32 A, VGS=10 V, RG=1.6 Ω |
- - - - |
6.37 2.73 17.1 2.7 |
- - - - |
ns |
| Gate Resistance | Rg | f=1.0 MHz | - | 1.3 | 2.6 | Ω |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=32 A, VGS=0 V | - | 0.9 | 1.2 | V |