中压MOSFET (60 - 200V , Rds(on) < 1Ω)
PSMQE090N08LS2
The PSMQE090N08LS2 80 V N-Channel Enhancement Mode MOSFET features high-speed switching and low reverse transfer capacitance with a current rating of 55 A. It has been tested for 100% UIS and gate resistance (Rg) in a DFN3333S-8L package, making it ideal for DC/DC brick and server power in power supply applications. Additionally, the product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
-
Package
DFN3333S-8L
-
Voltage
80 V
-
Current
55 A
-
Transistor Polarity
N-Channel
-
Applications
• DC/DC brick
• Server Power
-
Features
• RDS(ON) < 8.7 mΩ at VGS=10 V, ID=30 A
• RDS(ON) < 13.1 mΩ at VGS=4.5 V, ID=15 A
• High switching speed
• Low reverse transfer capacitance
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
• 100% UIS / Rg test in mass production
Absolute Maximum Ratings and Thermal Characteristics (TA=25°C unless otherwise specified)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 80 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 55 39 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 220 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 57.7 28.8 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Typical Thermal Resistance - Junction to Ambient |
RθJA | 60 | °C/W |
Electrical Characteristics (TA=25°C unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 μA | 80 | - | - | V |
| Gate Threshold Voltage | VGS(th> | VDS=VGS, ID=70 μA | 1.1 | 1.7 | 2.3 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10 V, ID=30 A VGS=4.5 V, ID=15 A |
- - |
7.1 9.3 |
8.7 13.1 |
mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=80 V, VGS=0 V | - | - | 1 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20 V, VDS=0 V | - | - | ±100 | nA |
| Transfer characteristics | gfs | VDS=10 V, ID=30 V | - | 69 | - | S |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=40 V, ID=25 A, VGS=4.5 V | - | 9 | - | nC |
| Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Plateau Voltage |
Qg Qgs Qgd Vplateau |
VDS=40 V, ID=25 A, VGS=10 V |
- - - - |
18 3.9 3.1 3.3 |
23 - - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=40 V, VGS=0 V, f=250 kHZ |
- - - |
980 433 13 |
1275 563 - |
pF |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time |
td(on) tr td(off) tf |
VDD=40 V, ID=25 A, VGS=10 V, RG=1.6 Ω |
- - - - |
5.1 2.4 14 2.7 |
- - - - |
ns |
| Gate Resistance | Rg | f=1.0 MHz | - | 1.5 | 3 | Ω |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=30 A, VGS=0 V | - | 0.9 | 1.2 | V |