中压MOSFET (60 - 200V , Rds(on) < 1Ω)
PSMQC094N10NS2
Active
PSMQC094N10NS2 is a 100V N-Channel enhancement mode MOSFET. Designed with logic level gate drive in a DFN5060-8L package, it minimizes RDS(ON) and boasts an excellent figure of merit (FOM). Making it ideal for applications such as PD Charger, Adapter and Home Appliance. The product is green molding compound as per IEC 61249 standard and EU RoHS 2.0 compliant.
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Package
DFN5060-8L
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Voltage
100V
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Current
61A
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Transistor Polarity
N-Channel
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Applications
● PD Charger
● Adapter
● Home Appliance
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Features
● RDS(ON)< 9.4 mΩ at VGS=10V, ID =30A
● RDS(ON)< 15.6 mΩ at VGS=6V, ID =15A
● High switching speed
● Low reverse transfer capacitance
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
● 100% UIS / Rg test in mass production
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C | ID | 61 | A |
| Continuous Drain Current | TC=100°C | ID | 43 | A |
| Pulsed Drain Current | TC=25°C | IDM | 244 | A |
| Power Dissipation | TC=25°C | PD | 75 | W |
| Power Dissipation | TC=100°C | PD | 37.5 | W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 50 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=115uA | 1.8 | 2.8 | 3.8 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=30A | - | 8.4 | 9.4 | mΩ |
| Drain-Source On-State Resistance | RDS(on) | VGS=6V, ID=15A | - | 11 | 15.6 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=100V, VGS=0V | - | - | 1 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | uA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=50V ID=30A VGS=10V |
- | 19 | 25 | nC |
| Gate-Source Charge | Qgs | VDS=50V ID=30A VGS=10V |
- | 7.6 | - | nC |
| Gate-Drain Charge | Qgd | VDS=50V ID=30A VGS=10V |
- | 3.0 | - | nC |
| Input Capacitance | Ciss | VDS=50V VGS=0V f=250kHZ |
- | 1370 | 1780 | pF |
| Output Capacitance | Coss | VDS=50V VGS=0V f=250kHZ |
- | 460 | 600 | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V VGS=0V f=250kHZ |
- | 10 | - | pF |
| Turn-On Delay Time | td(on) | VDD=50V ID=30A VGS=10V RG=3.0Ω |
- | 6.2 | - | ns |
| Rise Time | tr | VDD=50V ID=30A VGS=10V RG=3.0Ω |
- | 3.3 | - | ns |
| Turn-Off Delay Time | td(off) | VDD=50V ID=30A VGS=10V RG=3.0Ω |
- | 10.4 | - | ns |
| Fall Time | tf | VDD=50V ID=30A VGS=10V RG=3.0Ω |
- | 3.3 | - | ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=30A VGS=0V |
- | 0.9 | 1.2 | V |