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MOSFET总览

PSMQC073N06NS1

PSMQC073N06NS1 is a 60V N-Channel enhancement mode MOSFET, optimized to minimize on-state resistance with a best-in-class soft body diode. Designed with normal level gate drive in a DFN5060X-8L package, it is ideal for applications such as SR solutions of PD charger, BMS and BLDC motor driver switch. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.

  • Package

    DFN5060X-8L

  • Voltage

    60V

  • Current

    60A

  • Transistor Polarity

    N-Channel

  • Applications

    ● SR solutions of PD Charger
    ● BLDC motor driver switch
    ● BMS

  • Features

    ● RDS(ON), VGS@10V, ID@20A<7.3mΩ
    ● RDS(ON), VGS@7V, ID@15A<9.5mΩ
    ● High switching speed
    ● Low reverse transfer capacitance
    ● Lead free in compliance with EU RoHS 2.0
    ● Green molding compound as per IEC 61249 standard

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current TC=25°C
TC=100°C
ID 60
38
A
Pulsed Drain Current TC=25°C IDM 240 A
Power Dissipation TC=25°C
TC=100°C
PD 45
18
W
Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C
Thermal Resistance
- Junction to Ambient
RθJA 50 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 60 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 2 2.8 4 V
Drain-Source On-State Resistance RDS(on) VGS=10V, ID=20A - 6.1 7.3
Drain-Source On-State Resistance RDS(on) VGS=7V, ID=15A - 7.6 9.5
Zero Gate Voltae Drain Current IDSS VDS=60V, VGS=0V - - 1 μA
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Dynamic
Total Gate Charge Qg VDS=30V,ID=20A,VGS=7V - 29 - nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd

VDS=30V,ID=20A,VGS=10V
-
-
-
38
10
11
-
-
-

nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss

VDS=30V,VGS=0V,f=1.0kHZ
--
-
-
2093
672
15
-
-
-

pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
td(on)
tr
td(off)
tf

VDD=30V,ID=20A,VGS=10V,RG=2Ω
-
-
-
-
29
62
59
27
-
-
-
-

ns
Drain-Source Diode
Diode Forward Voltage VSD IS=1A,VGS=0V - 0.56 1 V
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