中压MOSFET (60 - 200V , Rds(on) < 1Ω)
PSMN015N10NS2
Active
PSMN015N10NS2 is a 100V N-Channel enhancement mode MOSFET, optimized to minimize on-state resistance with a best-in-class soft body diode. Designed with logic level gate drive in a TOLL package, it is ideal for applications such as PD chargers and home appliances. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
-
Package
TOLL
-
Voltage
100 V
-
Current
398 A
-
Transistor Polarity
N-Channel
-
Applications
● Energy storage system
● Battery backup unit
-
Features
● RDS(ON) < 1.5 mΩ at VGS = 10 V, ID = 100 A
● RDS(ON) < 2.4 mΩ at VGS = 6 V, ID = 50 A
● High switching speed
● Low reverse transfer capacitance
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
● 100% UIS / Rg test in mass production
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C | ID | 398 | A |
| Continuous Drain Current | TC=100°C | ID | 281 | A |
| Pulsed Drain Current | TC=25°C | IDM | 1592 | A |
| Power Dissipation | TC=25°C | PD | 500 | W |
| Power Dissipation | TC=100°C | PD | 250 | W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 40 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=890μA | 1.8 | 2.8 | 3.8 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=100A | - | 1.2 | 1.5 | mΩ |
| Drain-Source On-State Resistance | RDS(on) | VGS=6V, ID=50A | - | 1.6 | 2.4 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=100V, VGS=0V | - | - | 5 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=50V ID=100A VGS=10V |
- | 128 | 166 | nC |
| Gate-Source Charge | Qgs | VDS=50V ID=100A VGS=10V |
- | 42 | - | nC |
| Gate-Drain Charge | Qgd | VDS=50V ID=50A VGS=10V |
- | 17 | - | nC |
| Input Capacitance | Ciss | VDS=50V VGS=0V f=250kHZ |
- | 9640 | 12500 | pF |
| Output Capacitance | Coss | VDS=50V VGS=0V f=250kHZ |
- | 3670 | 4700 | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V VGS=0V f=250kHZ |
- | 39 | - | pF |
| Turn-On Delay Time | td(on) | VDD=50V ID=100A VGS=10V RG=1.8Ω |
- | 24.5 | - | ns |
| Rise Time | tr | VDD=50V ID=100A VGS=10V RG=1.8Ω |
- | 8.9 | - | ns |
| Turn-Off Delay Time | td(off) | VDD=50V ID=100A VGS=10V RG=1.8Ω |
- | 44.8 | - | ns |
| Fall Time | tf | VDD=50V ID=100A VGS=10V RG=1.8Ω |
- | 10.2 | - | ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=100A VGS=0V |
- | 0.9 | 1.2 | V |