Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
PARAMETER | SYMBOL | LIMIT | UNITS | |
---|---|---|---|---|
Drain-Source Voltage | VDS | -30 | V | |
Gate-Source Voltage | VGS | ±25 | V | |
Continuous Drain Current | TC=25°C TC=100°C |
ID | -41 -26 |
A |
Pulsed Drain Current | TC=25°C | IDM | -138 | A |
Power Dissipation | TC=25°C TC=100°C |
PD | 33.8 13.5 |
W |
Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C | |
Thermal Resistance | Junction to Case Junction to Ambient |
RθJC RθJA |
3.7 60 |
°C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
---|---|---|---|---|---|---|
Static Characteristics | ||||||
Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | -30 | - | - | V |
Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | -1.0 | -1.8 | -2.5 | V |
Drain-Source On-State Resistance | RDS(on) | VGS=-10 V,ID=-10 A VGS=-4.5 V, ID=-6 A |
- - |
10.0 15.6 |
12.5 20.3 |
mΩ |
Zero Gate Voltae Drain Current | IDSS | VDS=-30 V, VGS=0 V | - | - | -1 | uA |
Gate-Source Leakage Current | IGSS | VGS=±25 V, VDS=0V | - | - | ±10 | uA |
Dynamic | ||||||
Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS= -24 A,ID=-10 A,VGS=-10 V | - - - |
34 5 9 |
- - - |
nC |
Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=-25 V,VGS=0 V,f=1MHz | - - - |
1610 273 219 |
- - - |
pF |
Gate resistance | Rg | f=1MHz | - | 8 | - | Ω |
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDS=-24 V,ID=-10 A,VGS=-10 V,RG=3 Ω | - - - - |
7 4 51 66 |
- - - - |
ns |
Drain-Source Diode | ||||||
Diode Forward Voltage | VSD | IS= -20 A,VGS=0V | - | -0.85 | -1.3 | V |