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PJQ4435EP

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PJQ4435EP is -30 V P-Channel Enhancement Mode MOSFET, optimized to have excellent FOM. Designed with logic level gate drive in a DFN3333-8L package. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.

  • Package

    DFN3333-8L

  • Voltage

    -30 V

  • Current

    -41 A

  • Transistor Polarity

    P-Channel

  • Features

    ● RDS(ON), VGS@-10 V, ID@-10 A<12.5 mΩ
    ● RDS(ON), VGS@-4.5 V, ID@-6 A<20.3 mΩ
    ● 100% UIS tested
    ● Reliable and rugged
    ● Lead free in compliance with EU RoHS 2.0
    ● Green molding compound as per IEC 61249 standard

  • Applications

    ● Power supply
    ● Adapter
    ● DC fan



Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain Current TC=25°C
TC=100°C
ID -41
-26
A
Pulsed Drain Current TC=25°C IDM -138 A
Power Dissipation TC=25°C
TC=100°C
PD 33.8
13.5
W
Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C
Thermal Resistance Junction to Case
Junction to Ambient
RθJC
RθJA
3.7
60
°C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA -30 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA -1.0 -1.8 -2.5 V
Drain-Source On-State Resistance RDS(on) VGS=-10 V,ID=-10 A
VGS=-4.5 V, ID=-6 A
-
-
10.0
15.6
12.5
20.3
Zero Gate Voltae Drain Current IDSS VDS=-30 V, VGS=0 V - - -1 uA
Gate-Source Leakage Current IGSS VGS=±25 V, VDS=0V - - ±10 uA
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS= -24 A,ID=-10 A,VGS=-10 V -
-
-
34
5
9
-
-
-

nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS=-25 V,VGS=0 V,f=1MHz -
-
-
1610
273
219
-
-
-

pF
Gate resistance Rg f=1MHz - 8 - Ω
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
td(on)
tr
td(off)
tf
VDS=-24 V,ID=-10 A,VGS=-10 V,RG=3 Ω -
-
-
-
7
4
51
66
-
-
-
-

ns
Drain-Source Diode
Diode Forward Voltage VSD IS= -20 A,VGS=0V - -0.85 -1.3 V
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