低電壓雙極性電晶體
BCP53-16-AU
The BCP53-16-AU PNP Low Vce(sat) Transistor is designed for power management, high-side switches, and amplifiers, offering excellent DC current gain characteristics and high collector current capability in an SOT-223 package. This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101. Additionally, the product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0 for environmentally friendly performance.
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Package
SOT-223
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Voltage
-100 V
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Current
-1 A
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Features
• Silicon PNP epitaxial type
• Low Vce(sat) -0.4 V(max) @Ic/Ib=-500 mA/-50 mA
• High collector current capability
• Excellent DC current gain characteristics
• AEC-Q101 qualified
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 Standard
• NPN complement: BCP56-16-AU
Maximum Ratings and Thermal Characteristics (TA=25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS |
|---|---|---|---|
| Collector-Base Voltage | VCBO | -120 | V |
| Collector-Emitter Voltage | VCEO | -100 | V |
| Emitter-Base Voltage | VEBO | -6 | V |
| Collector Current (DC) | IC | -1 | A |
| Collector Current (Pulse) | ICP | -3 | A |
| Power Dissipation | PD | 2.6 | W |
| Junction Temperature | TJ | 150 | °C |
| Thermal Resistance from Junction to Ambient | RθJA | 48 | °C/W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C |