MOSFET概要
PSMN028N10NS2
Active
PSMN028N10NS2 is a 100V N-Channel enhancement mode MOSFET, optimized to minimize on-state resistance with a best-in-class soft body diode. Designed with logic level gate drive in a TOLL package, it is ideal for applications such as PD chargers and home appliances. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
TOLL
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Voltage
100 V
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Current
240 A
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Transistor Polarity
N-Channel
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Applications
● Energy storage system
● Battery backup unit
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Features
● RDS(ON) < 2.8 mΩ at VGS = 10 V, ID = 70 A
● RDS(ON) < 4.2 mΩ at VGS = 6 V, ID = 35 A
● High switching speed
● Low reverse transfer capacitance
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
● 100% UIS / Rg test in mass production
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C | ID | 240 | A |
| Continuous Drain Current | TC=100°C | ID | 168 | A |
| Pulsed Drain Current | TC=25°C | IDM | 960 | A |
| Power Dissipation | TC=25°C | PD | 333 | W |
| Power Dissipation | TC=100°C | PD | 167 | W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 40 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=440μA | 1.8 | 2.8 | 3.8 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=70A | - | 2.4 | 2.8 | mΩ |
| Drain-Source On-State Resistance | RDS(on) | VGS=6V, ID=35A | - | 3.2 | 4.2 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=100V, VGS=0V | - | - | 2 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=50V ID=70A VGS=10V |
- | 65 | 85 | nC |
| Gate-Source Charge | Qgs | VDS=50V ID=70A VGS=10V |
- | 23 | - | nC |
| Gate-Drain Charge | Qgd | VDS=50V ID=70A VGS=10V |
- | 9.3 | - | nC |
| Input Capacitance | Ciss | VDS=50V VGS=0V f=250kHZ |
- | 4540 | 5900 | pF |
| Output Capacitance | Coss | VDS=50V VGS=0V f=250kHZ |
- | 1980 | 2570 | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V VGS=0V f=250kHZ |
- | 14 | - | pF |
| Turn-On Delay Time | td(on) | VDD=50V ID=70A VGS=10V RG=1.8Ω |
- | 17.1 | - | ns |
| Rise Time | tr | VDD=50V ID=70A VGS=10V RG=1.8Ω |
- | 6.0 | - | ns |
| Turn-Off Delay Time | td(off) | VDD=50V ID=70A VGS=10V RG=1.8Ω |
- | 27.4 | - | ns |
| Fall Time | tf | VDD=50V ID=70A VGS=10V RG=1.8Ω |
- | 5.4 | - | ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=70A VGS=0V |
- | 0.9 | 1.2 | V |