MOSFET概要
BSS123-AU
The BSS123-AU 100 V N-Channel Enhancement Mode MOSFET features advanced trench process technology and supports a continuous current of 170 mA. It is AEC-Q101 qualified, ensuring high reliability for automotive applications. With built-in ESD protection, it is ideally suited for load switching, PWM control, and automotive systems, all within a compact SOT-23 package. Additionally, it uses a green molding compound compliant with IEC 61249 and EU RoHS 2.0 standards, supporting environmentally friendly performance.
-
Package
SOT-23
-
Voltage
100 V
-
Current
170 mA
-
Transistor Polarity
Single N-Channel
-
Applications
• Body & Comfort
-
Features
• RDS(ON), VGS@10 V, ID@170 mA<6 Ω
• RDS(ON), VGS@4.5 V, ID@130 mA<9 Ω
• Advanced Trench Process Technology
• Specially Designed for Switch Load, PWM Application, etc
• ESD Protected
• AEC-Q101 qualified
• Lead-free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA=25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 170 | mA | |
| Pulsed Drain Current | IDM | 680 | mA | |
| Power Dissipation | Ta=25oC Derate above 25oC |
PD | 500 4 |
mW mW/°C |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 250 | °C/W |
N-Channel Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 uA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 uA | 1 | 1.7 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5 V, ID=130 mA VGS=10 V, ID=170 mA |
- - |
4.5 4 |
9 6 |
Ω |
| Zero Gate Voltage Drain Current | IDSS | VDS=80 V, VGS=0 V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20 V, VDS=0 V | - | - | ±10 | uA |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=30 V, ID=170 mA, VGS=10 V |
- - - |
1.8 0.4 0.3 |
- - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=25 V, VGS=0 V, f=1 MHz |
- - - |
45 14 7.8 |
- - - |
pF |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=30 V, ID=170 mA, VGS=10 V, RG=6 Ω |
- - - - |
3.4 19 8.2 20 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=170 mA, VGS=0 V | - | 0.9 | 1.3 | V |