BCX56-16-AU

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The BCX56-16-AU NPN Low V_ce(sat) Transistor is designed for power management, high-side switches, and amplifiers, offering excellent DC current gain characteristics and high collector current capability in SOT-89 package. This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101. Additionally, the product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0 for environmentally friendly performance.

Package

SOT-89
Voltage

100 V
Current

1 A

Features

• Silicon NPN epitaxial type
• Low V_ce(sat) 0.35 V(max) @Ic/Ib=500 mA/50 mA
• High collector current capability
• Excellent DC current gain characteristics
• AEC-Q101 qualified
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 Standard
• PNP complement: BCX53-16-AU

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Maximum Ratings and Thermal Characteristics (T_A=25°C unless otherwise noted)

PARAMETER	SYMBOL	LIMIT	UNITS
Collector-Base Voltage	V_CBO	120	V
Collector-Emitter Voltage	V_CEO	100	V
Emitter-Base Voltage	V_EBO	6	V
Collector Current (DC)	I_C	1	A
Collector Current (Pulse)	I_CP	3	A
Power Dissipation	P_D	1.4	W
Junction Temperature	T_J	150	°C
Thermal Resistance from Junction to Ambient	R_θJA	89	°C/W
Operating Junction and Storage Temperature Range	T_J, T_STG	-55~150	°C

BCX56-16-AU

Maximum Ratings and Thermal Characteristics (TA=25°C unless otherwise noted)

Maximum Ratings and Thermal Characteristics (T_A=25°C unless otherwise noted)