小訊號MOSFET (Rds(on) > 1Ω)
2N7002KDW
2N7002KDW is a high-performance 60V Dual N-Channel MOSFET with high density cell technology. This product is suitable for low-voltage, low-current, high switching applications.
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Package
SOT-363
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Transistor Polarity
N-Channel
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Number of Channels
2
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VDS
60V
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Features
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Lead free in compliance with EU RoHS2.0
(2011/65/EU & 2015/865/EU directive)
• Green molding compound as per IEC61249 Std. . (Halogen Free)
Maximum RATINGS and Thermal Characteristics (TA=25°C unless otherwise noted )
| PARAMETER | Symbol | Limit | Units |
|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current | ID | 115 | mA |
| Pulsed Drain Current 1 | IDM | 800 | mA |
| Maximum Power Dissipation TA 25°C |
PD | 200 | mW |
| Operating Junction and Storage Temperature Range | TJ1 TSTG | -55 to +150 | °C |
| Junction-to Ambient Thermal Resistance (PCB mounted) 2 | RθJA | 625 | °C/W |
ELECTRICAL CHARACTERISTICS
| Parameter | Symbol | Test Conditon | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=10μA | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250μA | 1 | - | 2.5 | V |
| Drain-Souce On-State Resistance | RDS(ON) | VGS=4.5V, ID=200mA | - | - | 4.0 | Ω |
| Drain-Souce On-State Resistance | RDS(ON) | VGS=10V, ID=500mA | - | - | 3.0 | Ω |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | - | 1 | μA |
| Gate Body Leakage | IGSS | VGS=±20V, VDS=0V | - | - | ±10 | μA |
| Forward Transconductance | grs | VDS=15V, ID=250mA | 100 | - | - | mS |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=15V ID=200mA VGS=4.5V |
- | - | 0.8 | nC |
| Turn-On Delay Time | td(on) | VDD=30V RL=150Ω ID=200mA VGEN=10V RG=10Ω |
- | - | 20 | ns |
| Turn-Off Delay Time | td(off) | VDD=30V RL=150Ω ID=200mA VGEN=10V RG=10Ω |
- | - | 40 | ns |
| Input Capacitance | Ciss | VDS=25V VGS=0V f-1.0MHz |
- | - | 35 | pF |
| Output Capacitance | Coss | VDS=25V VGS=0V f-1.0MHz |
- | - | 10 | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V VGS=0V f-1.0MHz |
- | - | 5 | pF |
| Source-Drain Diode | ||||||
| Diode Forward Voltage | VSD | IS+200mA, VGS=0V | - | 0.82 | 1.3 | V |
| Continuous Diode Forward Current | IS | - | - | - | 115 | mA |
| Pulsed Diode Forward Current | IsM | - | - | - | 800 | mA |