低電圧MOSFET(20 - 40V , Rds(on) < 1Ω)
PJD40P03E-AU
PJD40P03E-AU is a 30V P-Channel enhancement-mode MOSFET with AEC-Q101 qualification. The MOSFET is designed with logic-level gate drive in a TO-252AA package. With low on−resistance (RDS(on)), an operating junction temperature of 175°C, and 100% unclamped inductive switching (UIS) tested, it is ideal for automotive applications such as body & comfort, infotainment, ADAS, and sensors. The product features Pb-free lead-plating and is EU RoHS 2.0 compliant.
-
Package
TO-252AA
-
Voltage
-30V
-
Current
-33A
-
Transistor Polarity
P-Channel
-
Applications
● Body& Comfort
● Infotainment
● ADAS
● Automotive Sensor
-
Features
● AEC-Q101 qualified
● Low RDS(ON), VGS@-10V, ID@-20A<18.8mΩ / VGS@-4.5V, ID@-10A<30.7mΩ
● 100% UIS tested
● Lead-free in compliance with EU RoHS 2.0 standard
● Halogen-free in compliance with IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | ±25 | V | |
| Continuous Drain Current (Note 4) | ID | -33 | A | |
| Pulsed Drain Current | IDM | -94 | A | |
| Power Dissipation | TC=25°C | PD | 33 | W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Typical Thermal Resistance - Junction to Ambient |
RθJA | 50 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | -30 | - | - | V |
| Gate Threshold Voltage | VGS(th> | VDS=VGS, ID=50uA | -1 | -1.8 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=20A | - | 15 | 18.8 | mΩ |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=10A | - | 23.6 | 30.7 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=30V, VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±25V, VDS=0V | - | - | ±10 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±10V, VDS=0V | - | - | ±1 | uA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=24V ID=20A VGS=10V |
- | 22 | - | nC |
| Gate-Source Charge | Qgs | VDS=24V ID=20A VGS=10V |
- | 3 | - | nC |
| Gate-Drain Charge | Qgd | VDS=24V ID=20A VGS=10V |
- | 7 | - | nC |
| Input Capacitance | Ciss | VDS=25V VGS=0V f=1MHZ |
- | 1009 | - | pF |
| Output Capacitance | Coss | VDS=25V VGS=0V f=1MHZ |
- | 1453 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V VGS=0V f=1MHZ |
- | 119 | - | pF |
| Turn-On Delay Time | td(on) | VDS=24V ID=20A VGS=10V RG=3Ω |
- | 7 | - | ns |
| Turn-On Rise Time | tr | VDS=24V ID=20A VGS=10V RG=3Ω |
- | 3 | - | ns |
| Turn-Off Delay Time | td(off) | VDS=24V ID=20A VGS=10V RG=3Ω |
- | 36 | - | ns |
| Turn-Off Fall Time | tf | VDS=24V ID=20A VGS=10V RG=3Ω |
- | 40 | - | ns |
| Drain-Source Diode | ||||||
| Diode Forward Current | IS | --- | - | - | 137 | A |
| Diode Forward Voltage | VSD | IS=20A VGS=0V |
- | -0.9 | -1.3 | V |