ESD Protection Overview
PE1605M4AQ
The PE1605M4AQ Low Capacitance ESD Protection device offers low leakage current and low clamping voltage with a capacitance of just 0.35 pF in a DFN2510-10L package. With a maximum leakage current of 50 nA at the rated voltage, it is an ideal solution for USB Type-C, HDMI 2.0, DisplayPort, and LVDS interfaces in computing applications, consumer electronics, and communication devices. Additionally, this product is made with a green molding compound that complies with IEC 61249 and EU RoHS 2.0, ensuring environmentally friendly performance.
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Package
DFN2510-10L
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Voltage
5 V
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VESD
±20 kV(Air)、±15 kV(Contact)
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Applications
• USB Type-C interface
• HDMI Interface 2.0 version
• V-By-One interface
• LVDS interface
• Display Port interface
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Features
• IEC61000-4-2(ESD) : ±20 kV Air, ±15 kV Contact
• IEC61000-4-4(EFT) : 40 A(5/50 ns)
• IEC61000-4-5(Lightning) : 4 A(8/20 μS)
• Low leakage current, maximum of 50 nA at rated voltage
• Low capacitance
• Low clamping voltage
• Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU)
• Green molding compound as per IEC61249 Std. (Halogen Free)
Maximum Ratings
| PARAMETER | SYMBOL | Number | Unit |
|---|---|---|---|
| ESD IEC61000-4-2(Air) ESD IEC61000-4-2(Contact) |
VESD | ±20 ±15 |
kV |
| Operating Junction Temperature Range | TJ | -55~150 | oC |
| Storage Temperature Range | TSTG | -55~150 | oC |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Reverse Stand-Off Voltage | VRWM | - | - | - | 5 | V |
| Reverse Breakdown Voltage | VBR | IBR=1 mA | 5.5 | - | - | V |
| Reverse Leakage Current | IR | VR= 5.0 V | - | - | 50 | nA |
| Clamping Voltage | VCL | IPP=1 A, tP=8/20 us, any I/O pins to GND IPP=4 A, tP=8/20 us, any I/O pins to GND |
- - |
- - |
10 15 |
V |
| Clamping Voltage TLP | VCL | IPP=8 A, tP=100 ns, any I/O pins to GND IPP=16 A, tP=100 ns, any I/O pins to GND |
- - |
16 23.5 |
- - |
V |
| Dynamic Resistance | RDYN | tP=100 ns | - | 0.94 | - | Ω |
| Off State Junction Capacitance | CJ | 2.5 Vdc Bias f=1 MHz, any I/O pins to GND 2.5 Vdc Bias f=1 MHz, between any I/O pins |
- - |
0.3 0.2 |
0.35 - |
pF |