Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
PARAMETER | SYMBOL | LIMIT | UNITS | |
---|---|---|---|---|
Maximum Repetitive Peak Reverse Voltage | VRRM | 100 | V | |
Maximum RMS Voltage | VRMS | 70 | V | |
Maximum DC Blocking Voltage | VDC | 100 | V | |
Maximum Average Forward Current | per device per diode |
IF(AV) | 6 3 |
A |
Peak Forward Surge Current : 8.3 ms Single Half Sine-Wave Superimposed On Rated Load | IFSM | 80 | A | |
Typical Junction Capacitance Measured at 1 MHz And Applied VR=4 V | CJ | 86 | pF | |
Typical Thermal Resistance per diode |
RθJA RθJC RθJL |
50 8.5 8 |
°C/W |
|
Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C |
Electrical Characteristics (TA = 25°C unless otherwise noted)
PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
---|---|---|---|---|---|---|
Forward Voltage Per Diode |
VF |
IF=1 A, TJ=25°C IF=2 A, TJ=25°C IF=3 A, TJ=25°C IF=1 A, TJ=125°C IF=2 A, TJ=125°C IF=3 A, TJ=125°C |
- - - - - - |
0.69 0.73 0.78 0.55 0.59 0.65 |
- - 0.8 - - - |
V |
Reverse Current Per Diode |
IR |
VR=80 V, TJ=25°C VR=100 V, TJ=25°C VR=100 V, TJ=125°C |
- - - |
0.015 0.03 15 |
- 50 - |
uA |